IPD65R420CFDA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD65R420CFDA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm

Encapsulados: TO-252

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IPD65R420CFDA datasheet

 ..1. Size:1304K  infineon
 ipd65r420cfd ipd65r420cfda.pdf pdf_icon

IPD65R420CFDA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPD65R420CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPD65R420CFDA DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered

 2.1. Size:1675K  infineon
 ipw65r420cfd ipb65r420cfd ipp65r420cfd ipa65r420cfd ipd65r420cfd ipi65r420cfd.pdf pdf_icon

IPD65R420CFDA

MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C D D t eet e 4 Rev. 2.6 in l Power Management & Multimarket In ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C D I 4 C D I D 4 C D I I 4 C D O 47 D O 1 Descripti n C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin i

 7.1. Size:1094K  infineon
 ipd65r400ce ips65r400ce.pdf pdf_icon

IPD65R420CFDA

IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de

 7.2. Size:242K  inchange semiconductor
 ipd65r400ce.pdf pdf_icon

IPD65R420CFDA

isc N-Channel MOSFET Transistor IPD65R400CE,IIPD65R400CE FEATURES Static drain-source on-resistance RDS(on) 0.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

MOSTRAR MÁS

Otros transistores... IPDH6N03LAG, IPDH4N03LAG, IPD80R2K8CE, IPD80R1K4CE, IPD80R1K0CE, IPD65R950CFD, IPD65R950C6, IPD65R660CFDA, IRF840, IPD65R420CFD, IPD65R250E6, IPD65R250C6, IPD65R225C7, IPD65R1K4CFD, IPD65R1K4C6, IPD65R190C7, IPD60R800CE