IPD65R420CFDA
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD65R420CFDA
Marking Code: 65F420A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 8.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42
Ohm
Package:
TO-252
IPD65R420CFDA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD65R420CFDA
Datasheet (PDF)
..1. Size:1304K infineon
ipd65r420cfd ipd65r420cfda.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPD65R420CFDA Data SheetRev. 2.1FinalAutomotive650V CoolMOS CFDA Power TransistorIPD65R420CFDADPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered
2.1. Size:1675K infineon
ipw65r420cfd ipb65r420cfd ipp65r420cfd ipa65r420cfd ipd65r420cfd ipi65r420cfd.pdf
MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C DD t eet e 4Rev. 2.6 in lPower Management & MultimarketIn ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C DI 4 C D I D 4 C D I I 4 C D O 47 D O 1 DescriptinC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin i
7.1. Size:1094K infineon
ipd65r400ce ips65r400ce.pdf
IPD65R400CE, IPS65R400CEMOSFETDPAK IPAK SL650V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE series combines the 13experience of the leading SJ MOSFET supplier with high class innovation.The resulting de
7.2. Size:242K inchange semiconductor
ipd65r400ce.pdf
isc N-Channel MOSFET Transistor IPD65R400CE,IIPD65R400CEFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: WPB4002
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