IRFP450A Todos los transistores

 

IRFP450A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP450A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 190 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 64 nC

Conductancia de drenaje-sustrato (Cd): 2038 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de MOSFET IRFP450A

 

IRFP450A Datasheet (PDF)

1.1. irfp450apbf.pdf Size:195K _upd-mosfet

IRFP450A
IRFP450A

PD -95054 SMPS MOSFET IRFP450APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40Ω 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

1.2. irfp450a.pdf Size:101K _international_rectifier

IRFP450A
IRFP450A

PD -91884 SMPS MOSFET IRFP450A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40? 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

 1.3. irfp450apbf.pdf Size:224K _international_rectifier

IRFP450A
IRFP450A

PD -95054 SMPS MOSFET IRFP450APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40? 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

1.4. irfp450a.pdf Size:942K _samsung

IRFP450A
IRFP450A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

 1.5. irfp450a sihfp450a.pdf Size:302K _vishay

IRFP450A
IRFP450A

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configuration Sin

Otros transistores... IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRF250 , IRFP450FI , IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC .

 

 
Back to Top

 


IRFP450A
  IRFP450A
  IRFP450A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 2N7405 | 2N7394U | 2N7394 | 2N7381 | 2N7380 | 2N7335E3 | 2N7335 | 2N7334 | 2N7297 | 2N7295 | 2N7293 | 2N7291 | 2N7281 | 2N7278 | 2N7275 |

 

 

 
Back to Top