All MOSFET. IRFP450A Datasheet

 

IRFP450A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP450A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 64 nC

Drain-Source Capacitance (Cd): 2038 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO247

IRFP450A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP450A Datasheet (PDF)

0.1. irfp450a.pdf Size:101K _international_rectifier

IRFP450A
IRFP450A

PD -91884SMPS MOSFETIRFP450AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40 14A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

0.2. irfp450apbf.pdf Size:195K _international_rectifier

IRFP450A
IRFP450A

PD -95054SMPS MOSFETIRFP450APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.40 14Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avala

 0.3. irfp450a.pdf Size:942K _samsung

IRFP450A
IRFP450A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

0.4. irfp450a sihfp450a.pdf Size:302K _vishay

IRFP450A
IRFP450A

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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