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IRFP450A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP450A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 190 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 14 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 64 nC

Выходная емкость (Cd): 2038 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm

Тип корпуса: TO247

Аналог (замена) для IRFP450A

 

 

IRFP450A Datasheet (PDF)

1.1. irfp450apbf.pdf Size:195K _upd-mosfet

IRFP450A
IRFP450A

PD -95054 SMPS MOSFET IRFP450APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40Ω 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

1.2. irfp450a.pdf Size:101K _international_rectifier

IRFP450A
IRFP450A

PD -91884 SMPS MOSFET IRFP450A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40? 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

 1.3. irfp450apbf.pdf Size:224K _international_rectifier

IRFP450A
IRFP450A

PD -95054 SMPS MOSFET IRFP450APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40? 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

1.4. irfp450a.pdf Size:942K _samsung

IRFP450A
IRFP450A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

 1.5. irfp450a sihfp450a.pdf Size:302K _vishay

IRFP450A
IRFP450A

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configuration Sin

Другие MOSFET... IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRF250 , IRFP450FI , IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC .

 

 
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Список транзисторов

Обновления

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
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