IPB90R340C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPB90R340C3
   Código: 9R340C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 94 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm
   Paquete / Cubierta: TO-263

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IPB90R340C3 Datasheet (PDF)

..1. Size:911K infineon
ipb90r340c3.pdf

IPB90R340C3CoolMOS Power TransistorProduct SummaryFeaturesVDS @ TJ=25C 900 V Lowest figure-of-merit RON x QgRDS(on),max @TJ=25C 0.34 W Extreme dv/dt ratedQg,typ 94 nC High peak current capability Qualified according to JEDEC1) for industrial applicationsPG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 900V is desi

..2. Size:258K inchange semiconductor
ipb90r340c3.pdf

Isc N-Channel MOSFET Transistor IPB90R340C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.1. Size:163K infineon
ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf

IPB90N04S4-02IPI90N04S4-02, IPP90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.1mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

9.2. Size:167K infineon
ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

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IPB90N06S4L-04IPI90N06S4L-04, IPP90N06S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.4mDS(on),max I 90 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

9.4. Size:170K infineon
ipb90n06s4-04 ipi90n06s4-04 ipp90n06s4-04.pdf