IPB90R340C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB90R340C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm

Encapsulados: TO-263

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IPB90R340C3 datasheet

 ..1. Size:911K  infineon
 ipb90r340c3.pdf pdf_icon

IPB90R340C3

IPB90R340C3 CoolMOS Power Transistor Product Summary Features VDS @ TJ=25 C 900 V Lowest figure-of-merit RON x Qg RDS(on),max @TJ=25 C 0.34 W Extreme dv/dt rated Qg,typ 94 nC High peak current capability Qualified according to JEDEC1) for industrial applications PG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is desi

 ..2. Size:258K  inchange semiconductor
 ipb90r340c3.pdf pdf_icon

IPB90R340C3

Isc N-Channel MOSFET Transistor IPB90R340C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 9.1. Size:163K  infineon
 ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf pdf_icon

IPB90R340C3

IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.1 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

 9.2. Size:167K  infineon
 ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf pdf_icon

IPB90R340C3

IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.7 m DS(on),max I 90 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

MOSTRAR MÁS

Otros transistores... IPD053N06N, IPD050N03L, IPD04N03LBG, IPD040N03L, IPD03N03LAG, IPD031N03L, IPD025N06N, IPD024N06N, AON7410, IPB80N06S3L-05, IPB65R660CFDA, IPB65R420CFD, IPB65R310CFDA, IPB65R310CFD, IPB65R225C7, IPB65R190E6, IPB65R190CFDA