IPB90R340C3 - аналоги, даташиты, параметры транзистора

IPB90R340C3 Datasheet (PDF)

..1. Size:911K infineon
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IPB90R340C3CoolMOS Power TransistorProduct SummaryFeaturesVDS @ TJ=25C 900 V Lowest figure-of-merit RON x QgRDS(on),max @TJ=25C 0.34 W Extreme dv/dt ratedQg,typ 94 nC High peak current capability Qualified according to JEDEC1) for industrial applicationsPG-TO263 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 900V is desi

..2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB90R340C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.1. Size:163K infineon
ipi90n04s4-02 ipp90n04s4-02 ipb90n04s4-02.pdf pdf_icon

IPB90N04S4-02IPI90N04S4-02, IPP90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.1mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

9.2. Size:167K infineon
ipi90n06s4-04 ipp90n06s4-04 ipb90n06s4-04.pdf pdf_icon

IPB90N06S4-04IPI90N06S4-04, IPP90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 3.7mDS(on),max I 90 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P