All MOSFET. IPB90R340C3 Datasheet


IPB90R340C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB90R340C3

SMD Transistor Code: 9R340C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 94 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.34 Ohm

Package: TO-263

IPB90R340C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPB90R340C3 Datasheet (PDF)

1.1. ipb90r340c3.pdf Size:911K _infineon


IPB90R340C3 CoolMOS™ Power Transistor Product Summary Features VDS @ TJ=25°C 900 V • Lowest figure-of-merit RON x Qg RDS(on),max @TJ=25°C 0.34 W • Extreme dv/dt rated Qg,typ 94 nC • High peak current capability • Qualified according to JEDEC1) for industrial applications PG-TO263 • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is desi

5.1. ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf Size:169K _infineon


IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.4 m? DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marki

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

Back to Top