IPB110N06LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPB110N06LG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 158 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO-263

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IPB110N06LG Datasheet (PDF)

..1. Size:334K infineon
ipb110n06lg.pdf

IPB110N06L G IPP110N06L GOptiMOS Power-TransistorProduct SummaryFeaturesV 60 VDS For fast switching converters and sync. rectificationR 11mDS(on),max SMD version N-channel enhancement - logic levelI 78 AD 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliantType IPB110N06L G IPP110N06L GType Package MarkingIPB1

..2. Size:740K infineon
ipb110n06lg ipp110n06lg.pdf

IPB110N06L G IPP110N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 11 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

7.1. Size:991K infineon
ipb110n20n3lf.pdf

IPB110N20N3LFMOSFETDPAKOptiMOSTM 3 Linear FET, 200 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

7.2. Size:258K inchange semiconductor
ipb110n20n3lf.pdf

Isc N-Channel MOSFET Transistor IPB110N20N3LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

8.1. Size:933K infineon
ipb110p06lm.pdf

IPB110P06LMMOSFETDPAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant1 Halogen-free according to IEC61249-2-213Product validationFully qualified according to JEDEC for Industrial ApplicationsDraint

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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