IPB110N06LG MOSFET PDF: N-Ch, 60V, 78A. Full specification with pinout and replacement list

IPB110N06LG PDF Specs and Replacement

   Type Designator: IPB110N06LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-263

IPB110N06LG substitution

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IPB110N06LG PDF Specs

..1. Size:334K infineon
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IPB110N06L G IPP110N06L G OptiMOS Power-Transistor Product Summary Features V 60 V DS For fast switching converters and sync. rectification R 11 m DS(on),max SMD version N-channel enhancement - logic level I 78 A D 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Type IPB110N06L G IPP110N06L G Type Package Marking IPB1... See More ⇒

..2. Size:740K infineon
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7.1. Size:991K infineon
ipb110n20n3lf.pdf pdf_icon

IPB110N20N3LF MOSFET D PAK OptiMOSTM 3 Linear FET, 200 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain ... See More ⇒

7.2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB110N20N3LF FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source... See More ⇒