IPB100N06S3-04 Todos los transistores

 

IPB100N06S3-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB100N06S3-04
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 214 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 2165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

IPB100N06S3-04 Datasheet (PDF)

 ..1. Size:195K  infineon
 ipb100n06s3-04.pdf pdf_icon

IPB100N06S3-04

IPB100N06S3-04IPI100N06S3-04, IPP100N06S3-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 4.1mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avala

 4.1. Size:159K  infineon
 ipb100n06s2l-05 ipp100n06s2l-05.pdf pdf_icon

IPB100N06S3-04

IPB100N06S2L-05IPP100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.4mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

 4.2. Size:155K  infineon
 ipb100n06s2-05 ipp100n06s2-05.pdf pdf_icon

IPB100N06S3-04

IPB100N06S2-05IPP100N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT

 6.1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPB100N06S3-04

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 4N60L-TQ2-R | IPP076N12N3G | CTM09N20 | NVTFS002N04CL | DMP2200UDW | NTLJS17D0P03P8Z | P2804ND5G

 

 
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