IPB100N06S3-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB100N06S3-04
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 2165 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de IPB100N06S3-04 MOSFET
IPB100N06S3-04 Datasheet (PDF)
ipb100n06s3-04.pdf

IPB100N06S3-04IPI100N06S3-04, IPP100N06S3-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 4.1mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avala
ipb100n06s2l-05 ipp100n06s2l-05.pdf

IPB100N06S2L-05IPP100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.4mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala
ipb100n06s2-05 ipp100n06s2-05.pdf

IPB100N06S2-05IPP100N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy
Otros transistores... IPB65R045C7 , IPB45N06S3-16 , IPB407N30N , IPB14N03LA , IPB12CN10NG , IPB117N20NFD , IPB110N06LG , IPB107N20NA , IRF2807 , IPB09N03LAG , IPB09N03LA , IPB085N06LG , IPB080N03L , IPB06N03LA , IPB065N10N3G , IPB065N03L , IPB05N03LBG .
History: H5N2522LS | EFC4615R | 4N80L-TND-R | YJS10N04A | HMS80N10AL | ME80N75T-G | AOI600A60
History: H5N2522LS | EFC4615R | 4N80L-TND-R | YJS10N04A | HMS80N10AL | ME80N75T-G | AOI600A60



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
mosfet k8a50d | sl100 transistor | d2499 datasheet | 6r190p6 datasheet | 2n270 | 2n2924 | mpsa65 | 2sa794