IPB100N06S3-04 PDF and Equivalents Search

 

IPB100N06S3-04 Specs and Replacement

Type Designator: IPB100N06S3-04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 2165 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: TO-263

IPB100N06S3-04 substitution

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IPB100N06S3-04 datasheet

 ..1. Size:195K  infineon
 ipb100n06s3-04.pdf pdf_icon

IPB100N06S3-04

IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.1 m DS(on),max I 100 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avala... See More ⇒

 4.1. Size:159K  infineon
 ipb100n06s2l-05 ipp100n06s2l-05.pdf pdf_icon

IPB100N06S3-04

IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.4 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala... See More ⇒

 4.2. Size:155K  infineon
 ipb100n06s2-05 ipp100n06s2-05.pdf pdf_icon

IPB100N06S3-04

IPB100N06S2-05 IPP100N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.7 m DS(on),max Automotive AEC Q101 qualified I 100 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested T... See More ⇒

 6.1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPB100N06S3-04

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty... See More ⇒

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Detailed specifications: IPB65R045C7 , IPB45N06S3-16 , IPB407N30N , IPB14N03LA , IPB12CN10NG , IPB117N20NFD , IPB110N06LG , IPB107N20NA , STF13NM60N , IPB09N03LAG , IPB09N03LA , IPB085N06LG , IPB080N03L , IPB06N03LA , IPB065N10N3G , IPB065N03L , IPB05N03LBG .

Keywords - IPB100N06S3-04 MOSFET specs

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