All MOSFET. IPB100N06S3-04 Datasheet

 

IPB100N06S3-04 Datasheet and Replacement


   Type Designator: IPB100N06S3-04
   Marking Code: 3PN0604
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 314 nC
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO-263
 

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IPB100N06S3-04 Datasheet (PDF)

 ..1. Size:195K  infineon
 ipb100n06s3-04.pdf pdf_icon

IPB100N06S3-04

IPB100N06S3-04IPI100N06S3-04, IPP100N06S3-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 4.1mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avala

 4.1. Size:159K  infineon
 ipb100n06s2l-05 ipp100n06s2l-05.pdf pdf_icon

IPB100N06S3-04

IPB100N06S2L-05IPP100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.4mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

 4.2. Size:155K  infineon
 ipb100n06s2-05 ipp100n06s2-05.pdf pdf_icon

IPB100N06S3-04

IPB100N06S2-05IPP100N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT

 6.1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPB100N06S3-04

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

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Datasheet: IPB65R045C7 , IPB45N06S3-16 , IPB407N30N , IPB14N03LA , IPB12CN10NG , IPB117N20NFD , IPB110N06LG , IPB107N20NA , AON7403 , IPB09N03LAG , IPB09N03LA , IPB085N06LG , IPB080N03L , IPB06N03LA , IPB065N10N3G , IPB065N03L , IPB05N03LBG .

Keywords - IPB100N06S3-04 MOSFET datasheet

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