IPB065N10N3G Todos los transistores

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 ipb065n10n3g.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G D PAK 1 Description Features N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175

 3.1. Size:258K  inchange semiconductor
 ipb065n10n3.pdf

Isc N-Channel MOSFET Transistor IPB065N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

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 ipb065n15n3g.pdf

IPB065N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1

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 ipb065n03l.pdf

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 ipb065n06lg ipp065n06lg.pdf

IPB065N06L G IPP065N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G P ( 381>>581>35=5>C

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 ipb065n03l.pdf

isc N-Channel MOSFET Transistor IPB065N03L DESCRIPTION Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY