IPB065N10N3G Specs and Replacement
Type Designator: IPB065N10N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 646 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-263
IPB065N10N3G substitution
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IPB065N10N3G datasheet
ipb065n10n3g.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 100 V IPB065N10N3 G D PAK 1 Description Features N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 ... See More ⇒
ipb065n10n3.pdf
Isc N-Channel MOSFET Transistor IPB065N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb065n15n3g.pdf
IPB065N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1... See More ⇒
ipb065n03l.pdf
pe %% # ! % # ! % (>.;?6?@ %>E Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m - @? >2H Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? 7B66 244@... See More ⇒
Detailed specifications: IPB110N06LG, IPB107N20NA, IPB100N06S3-04, IPB09N03LAG, IPB09N03LA, IPB085N06LG, IPB080N03L, IPB06N03LA, AO3400A, IPB065N03L, IPB05N03LBG, IPB05N03LA, IPB057N06N, IPB055N03L, IPB04N03LAT, IPB04N03LA, IPB04CN10NG
Keywords - IPB065N10N3G MOSFET specs
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