IPB039N10N3GE8187 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

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Type IPP039N04L GIPB039N04L G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

isc N-Channel MOSFET Transistor IPB039N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a