IPB039N10N3GE8187 Datasheet and Replacement
Type Designator: IPB039N10N3GE8187
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 1210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO-263-7
IPB039N10N3GE8187 substitution
IPB039N10N3GE8187 Datasheet (PDF)
ipb039n10n3ge8187.pdf

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1
ipb039n10n3g ipb039n10n3g3.pdf

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1
ipp039n04lg ipb039n04lg.pdf

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
ipb039n04l-g ipp039n04l-g.pdf

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
Datasheet: IPB055N03L , IPB04N03LAT , IPB04N03LA , IPB04CN10NG , IPB049N08N5 , IPB042N10N3GE8187 , IPB042N03L , IPB03N03LBG , 2SK3918 , IPB034N03L , IPB031N08N5 , IPB029N06N3GE8187 , IPB027N10N5 , IPB026N06N , IPB024N08N5 , IPB020N10N5 , IPB020N08N5 .
Keywords - IPB039N10N3GE8187 MOSFET datasheet
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