All MOSFET. IPB039N10N3GE8187 Datasheet

 

IPB039N10N3GE8187 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB039N10N3GE8187
   Marking Code: 039N10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 117 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-263-7

 IPB039N10N3GE8187 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB039N10N3GE8187 Datasheet (PDF)

 0.1. Size:664K  infineon
 ipb039n10n3ge8187.pdf

IPB039N10N3GE8187 IPB039N10N3GE8187

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 2.1. Size:666K  infineon
 ipb039n10n3g ipb039n10n3g3.pdf

IPB039N10N3GE8187 IPB039N10N3GE8187

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 7.1. Size:264K  infineon
 ipp039n04lg ipb039n04lg.pdf

IPB039N10N3GE8187 IPB039N10N3GE8187

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 7.2. Size:344K  infineon
 ipb039n04l-g ipp039n04l-g.pdf

IPB039N10N3GE8187 IPB039N10N3GE8187

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 7.3. Size:615K  infineon
 ipb039n04l .pdf

IPB039N10N3GE8187 IPB039N10N3GE8187

pe %% # ! % # ! % (>.;?6?@%>EFeatures 4 D S 4EF EI

 7.4. Size:686K  infineon
 ipb039n04l.pdf

IPB039N10N3GE8187 IPB039N10N3GE8187

Type IPP039N04L GIPB039N04L G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 7.5. Size:219K  inchange semiconductor
 ipb039n04l.pdf

IPB039N10N3GE8187 IPB039N10N3GE8187

isc N-Channel MOSFET Transistor IPB039N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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