All MOSFET. IPB039N10N3GE8187 Datasheet

 

IPB039N10N3GE8187 Datasheet and Replacement


   Type Designator: IPB039N10N3GE8187
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-263-7
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IPB039N10N3GE8187 Datasheet (PDF)

 0.1. Size:664K  infineon
 ipb039n10n3ge8187.pdf pdf_icon

IPB039N10N3GE8187

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 2.1. Size:666K  infineon
 ipb039n10n3g ipb039n10n3g3.pdf pdf_icon

IPB039N10N3GE8187

IPB039N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

 7.1. Size:264K  infineon
 ipp039n04lg ipb039n04lg.pdf pdf_icon

IPB039N10N3GE8187

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 7.2. Size:344K  infineon
 ipb039n04l-g ipp039n04l-g.pdf pdf_icon

IPB039N10N3GE8187

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

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History: MCH3484 | DMN30H4D0L

Keywords - IPB039N10N3GE8187 MOSFET datasheet

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