IPB015N08N5 Todos los transistores

 ..1. Size:2348K  infineon
 ipb015n08n5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate ch

 6.1. Size:670K  infineon
 ipp015n04n ipb015n04n.pdf

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 6.2. Size:440K  infineon
 ipb015n04l.pdf

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 6.3. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf

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 6.4. Size:673K  infineon
 ipp015n04ng ipb015n04ng.pdf

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 6.5. Size:443K  infineon
 ipb015n04lg ipb015n04l .pdf

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 6.6. Size:252K  inchange semiconductor
 ipb015n04l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB015N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM

 6.7. Size:257K  inchange semiconductor
 ipb015n04n.pdf

Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo