IPB015N08N5 Specs and Replacement
Type Designator: IPB015N08N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 2000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO-263
IPB015N08N5 substitution
- MOSFET ⓘ Cross-Reference Search
IPB015N08N5 datasheet
ipb015n08n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate ch... See More ⇒
ipp015n04n ipb015n04n.pdf
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ipb015n04l.pdf
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ipp015n04n6 ipb015n04n6.pdf
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Detailed specifications: IPB029N06N3GE8187, IPB027N10N5, IPB026N06N, IPB024N08N5, IPB020N10N5, IPB020N08N5, IPB017N10N5, IPB017N08N5, IRF740, IPB015N04L, IPB014N06N, IPB011N04L, IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE
Keywords - IPB015N08N5 MOSFET specs
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