IPB015N08N5 Specs and Replacement

Type Designator: IPB015N08N5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO-263

IPB015N08N5 substitution

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IPB015N08N5 datasheet

 ..1. Size:2348K  infineon
ipb015n08n5.pdf pdf_icon

IPB015N08N5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate ch... See More ⇒

 6.1. Size:670K  infineon
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IPB015N08N5

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 6.2. Size:440K  infineon
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IPB015N08N5

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 6.3. Size:670K  infineon
ipp015n04n6 ipb015n04n6.pdf pdf_icon

IPB015N08N5

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Detailed specifications: IPB029N06N3GE8187, IPB027N10N5, IPB026N06N, IPB024N08N5, IPB020N10N5, IPB020N08N5, IPB017N10N5, IPB017N08N5, IRF740, IPB015N04L, IPB014N06N, IPB011N04L, IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE

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