IPB015N08N5 Datasheet and Replacement
Type Designator: IPB015N08N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 2000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO-263
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IPB015N08N5 Datasheet (PDF)
ipb015n08n5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB015N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB015N08N5D-PAK 7pin1 DescriptionFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate ch
ipp015n04n ipb015n04n.pdf

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | SPD04N60S5 | FCPF7N60YDTU | SM6A12NSFP
Keywords - IPB015N08N5 MOSFET datasheet
IPB015N08N5 cross reference
IPB015N08N5 equivalent finder
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History: AP6679GI-HF | SPD04N60S5 | FCPF7N60YDTU | SM6A12NSFP



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