IPA65R420CFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA65R420CFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de IPA65R420CFD MOSFET
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IPA65R420CFD datasheet
ipa65r420cfd ipb65r420cfd ipi65r420cfd ipp65r420cfd ipw65r420cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R420CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R420CFD , IPB65R420CFD , IPP65R420CFD IPA65R420CFD , IPD65R420CFD , IPI65R420CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology f
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MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C D D t eet e 4 Rev. 2.6 in l Power Management & Multimarket In ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C D I 4 C D I D 4 C D I I 4 C D O 47 D O 1 Descripti n C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin i
ipa65r420cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R420CFD FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(
ipa65r400ce.pdf
IPA65R400CE MOSFET TO-220 FP 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a f
ipa65r400ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R400CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r125c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPA65R125C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPA65R125C7 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
ipa65r095c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPA65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPA65R095C7 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
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MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/
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MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
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ipa65r065c7.pdf
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ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf
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IPA65R1K0CE MOSFET TO-220 FP 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting hig
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R190CFD Data Sheet Rev. 2.7 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
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ipa65r190c7.pdf
IPA65R190C7 MOSFET PG-TO 220 FP 650V CoolMOS C7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fas
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MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
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IPA65R650CE, IPD65R650CE MOSFET TO-220 FP DPAK 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighti
ipa65r1k5ce.pdf
IPA65R1K5CE MOSFET TO-220 FP 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting hig
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ipa65r310cfd ipb65r310cfd ipi65r310cfd ipp65r310cfd ipw65r310cfd ipw65r310cfd ipb65r310cfd ipp65r310cfd ipa65r310cfd ipi65r310cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R310CFD Data Sheet Rev. 2.3 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R310CFD , IPB65R310CFD , IPP65R310CFD IPA65R310CFD , IPI65R310CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
ipa65r600c6.pdf
MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi
ipa65r650ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPx65R650CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPD65R650CE, IPA65R650CE DPAK TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs
ipa65r380c6.pdf
MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K
ipa65r045c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPA65R045C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPA65R045C7 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
ipa65r225c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPA65R225C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPA65R225C7 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
ipa65r125c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R125C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r110cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R110CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
ipa65r190e6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R190E6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte
ipa65r095c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R095C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r190cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R190CFD FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
ipa65r065c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R065C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r1k0ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R1K0CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r190c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R190C6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r310cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R310CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN
ipa65r380e6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R380E6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
ipa65r190c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R190C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r150cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IIPA65R150CFD DESCRIPT Low Drain-Source On-Resistance R
ipa65r1k5ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R1K5CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r280c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R280C6 FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
ipa65r600c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R600C6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r650ce.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R650CE FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte
ipa65r380c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R380C6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte
ipa65r280e6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R280E6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r045c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R045C7 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
ipa65r099c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R099C6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r225c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R225C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r660cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R660CFD FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.66 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(
Otros transistores... IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE, IPA80R1K4CE, IPA80R1K0CE, IPA65R650CE, IRF640N, IPA65R310CFD, IPA65R225C7, IPA65R190E6, IPA65R190CFD, IPA65R190C7, IPA65R190C6, IPA65R150CFD, IPA65R125C7
History: IPB020N10N5
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