IPA65R420CFD. Аналоги и основные параметры
Наименование производителя: IPA65R420CFD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31.2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 45 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.42 Ohm
Тип корпуса: TO-220F
Аналог (замена) для IPA65R420CFD
- подборⓘ MOSFET транзистора по параметрам
IPA65R420CFD даташит
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R190C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R380C6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte
ipa65r280e6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R280E6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r045c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R045C7 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
ipa65r099c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R099C6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r225c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R225C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
ipa65r660cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R660CFD FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.66 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(
Другие IGBT... IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE, IPA80R1K4CE, IPA80R1K0CE, IPA65R650CE, IRF640N, IPA65R310CFD, IPA65R225C7, IPA65R190E6, IPA65R190CFD, IPA65R190C7, IPA65R190C6, IPA65R150CFD, IPA65R125C7
History: IPA80R1K4CE | TMC8N65H | TMU8N60H
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