IPA65R420CFD Specs and Replacement
Type Designator: IPA65R420CFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO-220F
IPA65R420CFD substitution
- MOSFET ⓘ Cross-Reference Search
IPA65R420CFD datasheet
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ipa65r125c7.pdf
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ipa65r110cfd.pdf
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ipa65r190e6.pdf
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ipa65r095c7.pdf
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ipa65r190cfd.pdf
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ipa65r065c7.pdf
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ipa65r190c6.pdf
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ipa65r310cfd.pdf
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ipa65r380e6.pdf
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ipa65r190c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R190C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa65r150cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IIPA65R150CFD DESCRIPT Low Drain-Source On-Resistance R ... See More ⇒
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R1K5CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa65r280c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R280C6 FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
ipa65r600c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R600C6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa65r650ce.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R650CE FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte... See More ⇒
ipa65r380c6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R380C6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte... See More ⇒
ipa65r280e6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R280E6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa65r045c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R045C7 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
ipa65r099c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R099C6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa65r225c7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R225C7 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa65r660cfd.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R660CFD FEATURES With TO-220F Package Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.66 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒
Detailed specifications: IPB010N06N, IPB009N03L, IPA80R650CE, IPA80R460CE, IPA80R310CE, IPA80R1K4CE, IPA80R1K0CE, IPA65R650CE, IRF640N, IPA65R310CFD, IPA65R225C7, IPA65R190E6, IPA65R190CFD, IPA65R190C7, IPA65R190C6, IPA65R150CFD, IPA65R125C7
Keywords - IPA65R420CFD MOSFET specs
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