IRFP9133
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP9133
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 10
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140(max)
nS
Cossⓘ - Capacitancia
de salida: 450(max)
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4
Ohm
Paquete / Cubierta:
TO3P
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IRFP9133
Datasheet (PDF)
8.1. Size:142K international rectifier
irfp9140n.pdf 
PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc
8.3. Size:236K international rectifier
irfp9140npbf.pdf
PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re
8.4. Size:1757K international rectifier
irfp9140pbf.pdf
PD-95991IRFP9140PbF Lead-Free12/22/04Document Number: 91238 www.vishay.com1IRFP9140PbFDocument Number: 91238 www.vishay.com2IRFP9140PbFDocument Number: 91238 www.vishay.com3IRFP9140PbFDocument Number: 91238 www.vishay.com4IRFP9140PbFDocument Number: 91238 www.vishay.com5IRFP9140PbFDocument Number: 91238 www.vishay.com6IRFP9140PbFPeak Diode Re
8.6. Size:1444K vishay
irfp9140 sihfp9140.pdf
IRFP9140, SiHFP9140Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20 RoHS P-ChannelCOMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of Paralleli
8.7. Size:1478K vishay
irfp9140pbf sihfp9140.pdf
IRFP9140, SiHFP9140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of
8.8. Size:66K intersil
irfp9150.pdf
IRFP9150Data Sheet August 1999 File Number 2293.425A, 100V, 0.150 Ohm, P-Channel Power FeaturesMOSFET 25A, 100VThis advanced power MOSFET is designed, tested, and rDS(ON) = 0.150guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Ratedbreakdown avalanche mode of operation. It is a P-Channelenhancement mode silicon-gate power f
8.9. Size:241K inchange semiconductor
irfp9140n.pdf
isc P-Channel MOSFET Transistor IRFP9140NIIRFP9140NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and
Otros transistores... IRFP453
, IRFP460
, IRFP460A
, IRFP460LC
, IRFP470
, IRFP9130
, IRFP9131
, IRFP9132
, SKD502T
, IRFP9140
, IRFP9140N
, IRFP9141
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.
History: UTC654
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