IRFP9133 PDF and Equivalents Search

 

IRFP9133 Specs and Replacement

Type Designator: IRFP9133

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 max nS

Cossⓘ - Output Capacitance: 450 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3P

IRFP9133 substitution

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IRFP9133 datasheet

 8.1. Size:142K  international rectifier
irfp9140n.pdf pdf_icon

IRFP9133

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒

 8.2. Size:165K  international rectifier
irfp9140.pdf pdf_icon

IRFP9133

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Detailed specifications: IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRFP470 , IRFP9130 , IRFP9131 , IRFP9132 , RFP50N06 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 , IRFP9150 , IRFP9230 , IRFP9231 .

Keywords - IRFP9133 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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