FCB20N60TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCB20N60TM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: D2-PAK
Búsqueda de reemplazo de FCB20N60TM MOSFET
- Selecciónⓘ de transistores por parámetros
FCB20N60TM datasheet
fcb20n60tm.pdf
December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.
fcb20n60f f085.pdf
December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190m D D Features Typ rDS(on) = 171m at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current pack
fcb20n60 f085.pdf
November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198m D D Features Typ rDS(on) = 173m at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current packa
fcb20n60ftm.pdf
December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description 650V @ TJ = 150 C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a
Otros transistores... FCA20N60FS, FCA20N60S, FCA20N60SF109, FCAB2126, FCB110N65F, FCB11N60FTM, FCB11N60TM, FCB20N60FTM, IRFB4110, FCB290N80, FCB36N60NTM, FCD2250N80Z, FCD3400N80Z, FCD4N60TF, FCD4N60TM, FCD5N60TMWS, FCH041N60FF085
History: FCD3400N80Z | UTT25P06
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