FCB20N60TM
MOSFET. Datasheet pdf. Equivalent
Type Designator: FCB20N60TM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 208
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 98
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 1280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
D2-PAK
FCB20N60TM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCB20N60TM
Datasheet (PDF)
..1. Size:956K fairchild semi
fcb20n60tm.pdf 
December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.
6.1. Size:354K fairchild semi
fcb20n60f f085.pdf
December 2013FCB20N60F_F085N-Channel MOSFET600V, 20A, 190m DDFeatures Typ rDS(on) = 171m at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpack
6.2. Size:363K fairchild semi
fcb20n60 f085.pdf
November 2013FCB20N60_F085N-Channel MOSFET600V, 20A, 198m DDFeatures Typ rDS(on) = 173m at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpacka
6.3. Size:1144K fairchild semi
fcb20n60ftm.pdf
December 2008 TMSuperFETFCB20N60F600V N-CHANNEL FRFETFeatures Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a
6.4. Size:1152K fairchild semi
fcb20n60f.pdf
December 2008 TMSuperFETFCB20N60F600V N-CHANNEL FRFETFeatures Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a
6.5. Size:964K fairchild semi
fcb20n60.pdf
December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.
6.6. Size:486K onsemi
fcb20n60f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.7. Size:498K onsemi
fcb20n60.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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