FCB20N60TM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FCB20N60TM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 140 ns
Cossⓘ - Выходная емкость: 1280 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FCB20N60TM
FCB20N60TM Datasheet (PDF)
fcb20n60tm.pdf

December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.
fcb20n60f f085.pdf

December 2013FCB20N60F_F085N-Channel MOSFET600V, 20A, 190m DDFeatures Typ rDS(on) = 171m at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpack
fcb20n60 f085.pdf

November 2013FCB20N60_F085N-Channel MOSFET600V, 20A, 198m DDFeatures Typ rDS(on) = 173m at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpacka
fcb20n60ftm.pdf

December 2008 TMSuperFETFCB20N60F600V N-CHANNEL FRFETFeatures Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a
Другие MOSFET... FCA20N60FS , FCA20N60S , FCA20N60SF109 , FCAB2126 , FCB110N65F , FCB11N60FTM , FCB11N60TM , FCB20N60FTM , IRF640N , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM , FCD5N60TMWS , FCH041N60FF085 .



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