FDB44N25TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB44N25TM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 307 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 400 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.069 Ohm
Encapsulados: D2-PAK
Búsqueda de reemplazo de FDB44N25TM MOSFET
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FDB44N25TM datasheet
fdb44n25tm.pdf
September 2005 TM UniFET FDB44N25 250V N-Channel MOSFET Features Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 47 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailore
fdb44n25.pdf
September 2005 TM UniFET FDB44N25 250V N-Channel MOSFET Features Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 47 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailore
fdb44n25.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, FDB2570, FDB2670, FDB3672, FDB42AN15A0, AON7506, FDB52N20TM, FDB5645, FDB5800F085, FDB6021P, FDB6670AS, FDB6690S, FDB7030LL86Z, FDB8132
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