FDB44N25TM. Аналоги и основные параметры
Наименование производителя: FDB44N25TM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 307 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 44 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 400 ns
Cossⓘ - Выходная емкость: 450 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.069 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FDB44N25TM
- подборⓘ MOSFET транзистора по параметрам
FDB44N25TM даташит
fdb44n25tm.pdf
September 2005 TM UniFET FDB44N25 250V N-Channel MOSFET Features Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 47 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailore
fdb44n25.pdf
September 2005 TM UniFET FDB44N25 250V N-Channel MOSFET Features Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 47 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailore
fdb44n25.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, FDB2570, FDB2670, FDB3672, FDB42AN15A0, AON7506, FDB52N20TM, FDB5645, FDB5800F085, FDB6021P, FDB6670AS, FDB6690S, FDB7030LL86Z, FDB8132
History: IRFP250R
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Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
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