FDB44N25TM MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB44N25TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 307 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: D2-PAK
FDB44N25TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB44N25TM Datasheet (PDF)
fdb44n25tm.pdf
September 2005TMUniFETFDB44N25250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 47 nC)DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailore
fdb44n25.pdf
September 2005TMUniFETFDB44N25250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 47 nC)DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailore
fdb44n25.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DMN66D0LT
History: DMN66D0LT
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