FDB86563F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB86563F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 126 nC
   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 2355 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: D2-PAK

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FDB86563F085 Datasheet (PDF)

6.1. Size:468K fairchild semi
fdb86563 f085.pdf

December 2014FDB86563_F085N-Channel PowerTrench MOSFET60 V, 110 A, 1.8 m Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers

6.2. Size:451K onsemi
fdb86563-f085.pdf

FDB86563-F085N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 mDDFeatures Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS CapabilityG RoHS CompliantGS Qualified to AEC Q101TO-263SApplicationsFDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter

7.1. Size:440K onsemi
fdb86566-f085.pdf

FDB86566-F085DDN-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 mGFeaturesGS Typical RDS(on) = 2.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 ATO-263S UIS CapabilityFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/

7.2. Size:4057K onsemi
fdb86569-f085.pdf

MOSFET N-Channel,POWERTRENCH)60 V, 80 A, 5.6 mWFDB86569-F085Featureswww.onsemi.com Typical RDS(on) = 4.4 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10 V, ID = 80 AD UIS Capability These Device is Pb-Free and is RoHS Compliant Qualified to AEC-Q101GApplications Automotive Engine ControlS PowerTrain ManagementD2PAK-3

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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