FDB86563F085 Datasheet. Specs and Replacement
Type Designator: FDB86563F085 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 2355 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: D2-PAK
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FDB86563F085 substitution
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FDB86563F085 datasheet
fdb86563 f085.pdf
December 2014 FDB86563_F085 N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 m Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers ... See More ⇒
fdb86563-f085.pdf
FDB86563-F085 N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 m D D Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability G RoHS Compliant G S Qualified to AEC Q101 TO-263 S Applications FDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter... See More ⇒
fdb86566-f085.pdf
FDB86566-F085 D D N-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 m G Features G S Typical RDS(on) = 2.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A TO-263 S UIS Capability FDB SERIES RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/... See More ⇒
Detailed specifications: FDB5800F085, FDB6021P, FDB6670AS, FDB6690S, FDB7030LL86Z, FDB8132, FDB8160, FDB8444TS, TK10A60D, FDB8874, FDB8876, FDB8878, FDBL0110N60, FDBL0150N60, FDBL0150N80, FDBL0210N80, FDBL0330N80
Keywords - FDB86563F085 MOSFET specs
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