FDB86563_F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDB86563_F085
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 333 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 4 V
Максимально допустимый постоянный ток стока (Id): 110 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 126 nC
Время нарастания (tr): 110 ns
Выходная емкость (Cd): 2355 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0018 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FDB86563_F085
FDB86563_F085 Datasheet (PDF)
1.1. fdb86563 f085.pdf 
Size:468K _upd-mosfet
December 2014 FDB86563_F085 N-Channel PowerTrench® MOSFET 60 V, 110 A, 1.8 mΩ Features Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers
5.1. fdb86360 f085.pdf Size:365K _fairchild_semi
January 2014 FDB86360_F085 N-Channel Power Trench® MOSFET D D 80V, 110A, 1.8mΩ Features Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c
5.2. fdb86135.pdf Size:241K _fairchild_semi
May 2013 FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A incorporates Shielded Gate technology. This process has been optimized for the on-state
5.3. fdb86363 f085.pdf Size:486K _fairchild_semi
June 2014 FDB86363_F085 N-Channel PowerTrench® MOSFET D D 80 V, 110 A, 2.4 mΩ Features Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co
5.4. fdb86102lz.pdf Size:249K _fairchild_semi
May 2011 FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ Features General Description Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A been especially tailored to minimize the on-state resistance and switching los
5.5. fdb86366 f085.pdf Size:465K _fairchild_semi
December 2014 FDB86366_F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 3.6 mΩ Features Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In
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Список транзисторов
Обновления
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