FDC3512F095 Todos los transistores

 

FDC3512F095 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDC3512F095
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm
   Paquete / Cubierta: SSOT-6
 

 Búsqueda de reemplazo de FDC3512F095 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDC3512F095 Datasheet (PDF)

 7.1. Size:130K  fairchild semi
 fdc3512 f095.pdf pdf_icon

FDC3512F095

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 7.2. Size:133K  fairchild semi
 fdc3512.pdf pdf_icon

FDC3512F095

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 7.3. Size:222K  onsemi
 fdc3512.pdf pdf_icon

FDC3512F095

FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremelyspecifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON)

 7.4. Size:843K  cn vbsemi
 fdc3512.pdf pdf_icon

FDC3512F095

FDC3512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D

MOSTRAR MÁS

Otros transistores... FDBL0150N80 , FDBL0210N80 , FDBL0330N80 , FDBL86363F085 , FDBL86366F085 , FDBL86561F085 , FDBL86563F085 , FDC2512F095 , AO3400A , FDC3612F095 , FDC3616N , FDC5612F095 , FDC6020C , FDC602PF095 , FDC633NF095 , FDC640PF095 , FDC645NF095 .

History: 2P308B9 | RSD100N10FRA | VBZFB40P03 | RS1G260MN | 2P7154BC | AP9U18GH

 

 
Back to Top

 


 
.