FDC3512F095 - параметры транзистора MOSFET, его аналоги, datasheet

FDC3512F095 Datasheet (PDF)

7.1. Size:130K fairchild semi
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February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

7.2. Size:133K fairchild semi
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7.3. Size:222K onsemi
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FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremelyspecifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON)

7.4. Size:843K cn vbsemi
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FDC3512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D

Другие MOSFET... FDBL0150N80 , FDBL0210N80 , FDBL0330N80 , FDBL86363F085 , FDBL86366F085 , FDBL86561F085 , FDBL86563F085 , FDC2512F095 , RU6888R , FDC3612F095 , FDC3616N , FDC5612F095 , FDC6020C , FDC602PF095 , FDC633NF095 , FDC640PF095 , FDC645NF095 .