FDC3512F095 Specs and Replacement

Type Designator: FDC3512F095

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: SSOT-6

FDC3512F095 substitution

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FDC3512F095 datasheet

 7.1. Size:130K  fairchild semi
 fdc3512 f095.pdf pdf_icon

FDC3512F095

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for... See More ⇒

 7.2. Size:133K  fairchild semi
 fdc3512.pdf pdf_icon

FDC3512F095

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for... See More ⇒

 7.3. Size:222K  onsemi
 fdc3512.pdf pdf_icon

FDC3512F095

FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremely specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON) ... See More ⇒

 7.4. Size:843K  cn vbsemi
 fdc3512.pdf pdf_icon

FDC3512F095

FDC3512 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS D... See More ⇒

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Detailed specifications: FDBL0150N80, FDBL0210N80, FDBL0330N80, FDBL86363F085, FDBL86366F085, FDBL86561F085, FDBL86563F085, FDC2512F095, AO3400A, FDC3612F095, FDC3616N, FDC5612F095, FDC6020C, FDC602PF095, FDC633NF095, FDC640PF095, FDC645NF095

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