FDC645NF095 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDC645NF095
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 227 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: SSOT-6
- Selección de transistores por parámetros
FDC645NF095 Datasheet (PDF)
fdc645n.pdf

April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 5.5 A, 30 V. RDS(ON) = 30 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 26 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for
fdc645n f095.pdf

April 2001 FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 5.5 A, 30 V. RDS(ON) = 30 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 26 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for
fdc645n.pdf

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