FDC645NF095 Specs and Replacement

Type Designator: FDC645NF095

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 227 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SSOT-6

FDC645NF095 substitution

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FDC645NF095 datasheet

 7.1. Size:78K  fairchild semi
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FDC645NF095

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FDC645NF095

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 7.3. Size:191K  onsemi
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FDC645NF095

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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Detailed specifications: FDC3512F095, FDC3612F095, FDC3616N, FDC5612F095, FDC6020C, FDC602PF095, FDC633NF095, FDC640PF095, IRLB3034, FDC697P, FDC697PF077, FDC699P, FDC699PF077, FDC796N, FDC796NF077, FDD044AN03L, FDD068AN03L

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