FDD107AN06LA0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD107AN06LA0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.9 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 54 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.091 Ohm
Paquete / Cubierta: TO-252AA
Búsqueda de reemplazo de FDD107AN06LA0 MOSFET
FDD107AN06LA0 Datasheet (PDF)
fdd107an06la0.pdf

January 2004FDD107AN06LA0N-Channel PowerTrench MOSFET60V, 10A, 107mFeatures Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c
fdd107an06la0.pdf

isc N-Channel MOSFET Transistor FDD107AN06LA0FEATURESDrain Current : I =10.9A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =91m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
fdd10an06a0.pdf

August 2002FDD10AN06A0N-Channel PowerTrench MOSFET60V, 50A, 10.5mFeatures Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c
fdd10n20lz fdd10n20lztm.pdf

December 2010 TM UniFETFDD10N20LZN-Channel MOSFET200V Logic, 7.6A, 0.36Features Description RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC)technology. Low Crss ( Typ.11pF)This advance technology h
Otros transistores... FDC697P , FDC697PF077 , FDC699P , FDC699PF077 , FDC796N , FDC796NF077 , FDD044AN03L , FDD068AN03L , AO3407 , FDD10N20LZTM , FDD14AN06LA0 , FDD16AN08A0NF054 , FDD20AN06A0 , FDD24AN06LA0 , FDD2512 , FDD2570 , FDD2612 .
History: AP22N13GH-HF | FDU2572 | AM7151P | IMW120R045M1 | STL34N65M5 | AM7483P | SIHFR1N60A
History: AP22N13GH-HF | FDU2572 | AM7151P | IMW120R045M1 | STL34N65M5 | AM7483P | SIHFR1N60A



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTE6888A | JMTE3003A | JMTE3002B | JMTE068N07A | JMTE060N06A | JMTE035N06D | JMTE035N04A | JMTE025N04D | JMTE018N03A | JMTD3134K | JMTD2N7002KS | JMSL1509PG | JMSL10A13P | JMSL10A13L | JMSL10A13K | JMSL1010PU
Popular searches
2sc945 | irfp250n | irf9540n | bd139 datasheet | irf9640 | 2n3053 | a1015 | mpsa42