FDD107AN06LA0 Specs and Replacement

Type Designator: FDD107AN06LA0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.091 Ohm

Package: TO-252AA

FDD107AN06LA0 substitution

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FDD107AN06LA0 datasheet

 ..1. Size:222K  fairchild semi
fdd107an06la0.pdf pdf_icon

FDD107AN06LA0

January 2004 FDD107AN06LA0 N-Channel PowerTrench MOSFET 60V, 10A, 107m Features Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c... See More ⇒

 ..2. Size:315K  inchange semiconductor
fdd107an06la0.pdf pdf_icon

FDD107AN06LA0

isc N-Channel MOSFET Transistor FDD107AN06LA0 FEATURES Drain Current I =10.9A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R =91m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 9.1. Size:236K  fairchild semi
fdd10an06a0.pdf pdf_icon

FDD107AN06LA0

August 2002 FDD10AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 10.5m Features Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c... See More ⇒

 9.2. Size:230K  fairchild semi
fdd10n20lz fdd10n20lztm.pdf pdf_icon

FDD107AN06LA0

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description RDS(on) = 0.30 ( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC) technology. Low Crss ( Typ.11pF) This advance technology h... See More ⇒

Detailed specifications: FDC697P, FDC697PF077, FDC699P, FDC699PF077, FDC796N, FDC796NF077, FDD044AN03L, FDD068AN03L, AO4407A, FDD10N20LZTM, FDD14AN06LA0, FDD16AN08A0NF054, FDD20AN06A0, FDD24AN06LA0, FDD2512, FDD2570, FDD2612

Keywords - FDD107AN06LA0 MOSFET specs

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