FDD2512 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD2512

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm

Encapsulados: TO-252

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FDD2512 datasheet

 ..1. Size:84K  fairchild semi
fdd2512.pdf pdf_icon

FDD2512

August 2001 FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.7 A, 150 V RDS(ON) = 420 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 470 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature Low g

 9.1. Size:572K  fairchild semi
fdd2572 f085.pdf pdf_icon

FDD2512

S November 2008 FDD2572_F085 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous

 9.2. Size:97K  fairchild semi
fdd2570.pdf pdf_icon

FDD2512

February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 90 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOS

 9.3. Size:247K  fairchild semi
fdd2572 fdu2572.pdf pdf_icon

FDD2512

September 2002 FDD2572 / FDU2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

Otros transistores... FDD044AN03L, FDD068AN03L, FDD107AN06LA0, FDD10N20LZTM, FDD14AN06LA0, FDD16AN08A0NF054, FDD20AN06A0, FDD24AN06LA0, IRF3205, FDD2570, FDD2612, FDD26AN06A0, FDD3570, FDD3N50NZTM, FDD45AN06LA0, FDD45AN06LA0F085, FDD5810