FDD2512 Todos los transistores

 

FDD2512 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD2512
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
   Paquete / Cubierta: TO-252
 

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FDD2512 Datasheet (PDF)

 ..1. Size:84K  fairchild semi
fdd2512.pdf pdf_icon

FDD2512

August 2001FDD2512150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.7 A, 150 V RDS(ON) = 420 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 470 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. These MOSFETs feature Low g

 9.1. Size:572K  fairchild semi
fdd2572 f085.pdf pdf_icon

FDD2512

SNovember 2008FDD2572_F085N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous

 9.2. Size:97K  fairchild semi
fdd2570.pdf pdf_icon

FDD2512

February 2001FDD2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 90 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOS

 9.3. Size:247K  fairchild semi
fdd2572 fdu2572.pdf pdf_icon

FDD2512

September 2002FDD2572 / FDU2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

Otros transistores... FDD044AN03L , FDD068AN03L , FDD107AN06LA0 , FDD10N20LZTM , FDD14AN06LA0 , FDD16AN08A0NF054 , FDD20AN06A0 , FDD24AN06LA0 , IRF3205 , FDD2570 , FDD2612 , FDD26AN06A0 , FDD3570 , FDD3N50NZTM , FDD45AN06LA0 , FDD45AN06LA0F085 , FDD5810 .

History: SQM120N03-1M5L | FCD1300N80Z

 

 
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