FDD2512 Specs and Replacement

Type Designator: FDD2512

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO-252

FDD2512 substitution

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FDD2512 datasheet

 ..1. Size:84K  fairchild semi
fdd2512.pdf pdf_icon

FDD2512

August 2001 FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.7 A, 150 V RDS(ON) = 420 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 470 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature Low g... See More ⇒

 9.1. Size:572K  fairchild semi
fdd2572 f085.pdf pdf_icon

FDD2512

S November 2008 FDD2572_F085 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous ... See More ⇒

 9.2. Size:97K  fairchild semi
fdd2570.pdf pdf_icon

FDD2512

February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 90 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOS... See More ⇒

 9.3. Size:247K  fairchild semi
fdd2572 fdu2572.pdf pdf_icon

FDD2512

September 2002 FDD2572 / FDU2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono... See More ⇒

Detailed specifications: FDD044AN03L, FDD068AN03L, FDD107AN06LA0, FDD10N20LZTM, FDD14AN06LA0, FDD16AN08A0NF054, FDD20AN06A0, FDD24AN06LA0, IRF3205, FDD2570, FDD2612, FDD26AN06A0, FDD3570, FDD3N50NZTM, FDD45AN06LA0, FDD45AN06LA0F085, FDD5810

Keywords - FDD2512 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs