FDD6676AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD6676AS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 710 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm

Encapsulados: TO-252

 Búsqueda de reemplazo de FDD6676AS MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDD6676AS datasheet

 ..1. Size:411K  fairchild semi
 fdd6676as.pdf pdf_icon

FDD6676AS

April 2008 FDD6676AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ

 7.1. Size:117K  fairchild semi
 fdd6676s.pdf pdf_icon

FDD6676AS

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge

 7.2. Size:80K  fairchild semi
 fdd6676.pdf pdf_icon

FDD6676AS

April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 7.3. Size:287K  inchange semiconductor
 fdd6676s.pdf pdf_icon

FDD6676AS

isc N-Channel MOSFET Transistor FDD6676S FEATURES Drain Current I =78A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

MOSTRAR MÁS

Otros transistores... FDD5810, FDD5N60NZTM, FDD6512A, FDD6606, FDD6632, FDD6670AL, FDD6670AS, FDD6672A, IRFB4227, FDD6682, FDD6688S, FDD6696, FDD6776A, FDD6780, FDD6782A, FDD6796, FDD6N20TF