FDD6676AS Datasheet. Specs and Replacement

Type Designator: FDD6676AS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 710 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TO-252

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FDD6676AS datasheet

 ..1. Size:411K  fairchild semi
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FDD6676AS

April 2008 FDD6676AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ... See More ⇒

 7.1. Size:117K  fairchild semi
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FDD6676AS

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge ... See More ⇒

 7.2. Size:80K  fairchild semi
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FDD6676AS

April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for... See More ⇒

 7.3. Size:287K  inchange semiconductor
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FDD6676AS

isc N-Channel MOSFET Transistor FDD6676S FEATURES Drain Current I =78A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒

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Detailed specifications: FDD5810, FDD5N60NZTM, FDD6512A, FDD6606, FDD6632, FDD6670AL, FDD6670AS, FDD6672A, AON6414A, FDD6682, FDD6688S, FDD6696, FDD6776A, FDD6780, FDD6782A, FDD6796, FDD6N20TF

Keywords - FDD6676AS MOSFET specs

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