Справочник MOSFET. FDD6676AS

 

FDD6676AS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD6676AS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 710 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для FDD6676AS

 

 

FDD6676AS Datasheet (PDF)

 ..1. Size:411K  fairchild semi
 fdd6676as.pdf

FDD6676AS FDD6676AS

April 2008FDD6676AS tm30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ

 7.1. Size:117K  fairchild semi
 fdd6676s.pdf

FDD6676AS FDD6676AS

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge

 7.2. Size:80K  fairchild semi
 fdd6676.pdf

FDD6676AS FDD6676AS

April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 7.3. Size:287K  inchange semiconductor
 fdd6676s.pdf

FDD6676AS FDD6676AS

isc N-Channel MOSFET Transistor FDD6676SFEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

 7.4. Size:287K  inchange semiconductor
 fdd6676.pdf

FDD6676AS FDD6676AS

isc N-Channel MOSFET Transistor FDD6676FEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

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