FDD7N60NZTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD7N60NZTM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
   Paquete / Cubierta: D-PAK

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FDD7N60NZTM Datasheet (PDF)

..1. Size:663K fairchild semi
fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf

November 2013FDD7N60NZ / FDU7N60NZTUN-Channel UniFETTM II MOSFET600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC)technology. This advanced MOSFET family has the smallest on- Low Crs

5.1. Size:288K inchange semiconductor
fdd7n60nz.pdf

isc N-Channel MOSFET Transistor FDD7N60NZFEATURESDrain Current : I =5.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

9.1. Size:285K fairchild semi
fdd7n25lztm.pdf

December 2010 UniFETTMFDD7N25LZN-Channel MOSFET 250V, 6.2A, 0.55Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ.12nC)DMOS technology. Low Crss ( Typ. 8pF)This advance technology has been especial

9.2. Size:607K fairchild semi
fdd7n20tm.pdf

November 2013FDD7N20TMN-Channel UniFETTM MOSFET200 V, 5 A, 690 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching perfo

9.3. Size:291K fairchild semi
fdd7n25lz.pdf

9.4. Size:346K fairchild semi
fdd7n20 fdu7n20.pdf

April 2007UniFETTMFDD7N20 / FDU7N20tmN-Channel MOSFET 200V, 5A, 0.69Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge( Typ. 5nC )stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has bee

9.5. Size:750K onsemi
fdd7n25lz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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