Справочник MOSFET. FDD7N60NZTM

 

FDD7N60NZTM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD7N60NZTM
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.25 Ohm
   Тип корпуса: D-PAK
 

 Аналог (замена) для FDD7N60NZTM

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD7N60NZTM Datasheet (PDF)

 ..1. Size:663K  fairchild semi
fdd7n60nz fdd7n60nztm fdu7n60nztu.pdfpdf_icon

FDD7N60NZTM

November 2013FDD7N60NZ / FDU7N60NZTUN-Channel UniFETTM II MOSFET600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC)technology. This advanced MOSFET family has the smallest on- Low Crs

 5.1. Size:288K  inchange semiconductor
fdd7n60nz.pdfpdf_icon

FDD7N60NZTM

isc N-Channel MOSFET Transistor FDD7N60NZFEATURESDrain Current : I =5.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.1. Size:285K  fairchild semi
fdd7n25lztm.pdfpdf_icon

FDD7N60NZTM

December 2010 UniFETTMFDD7N25LZN-Channel MOSFET 250V, 6.2A, 0.55Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ.12nC)DMOS technology. Low Crss ( Typ. 8pF)This advance technology has been especial

 9.2. Size:607K  fairchild semi
fdd7n20tm.pdfpdf_icon

FDD7N60NZTM

November 2013FDD7N20TMN-Channel UniFETTM MOSFET200 V, 5 A, 690 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching perfo

Другие MOSFET... FDD6780 , FDD6782A , FDD6796 , FDD6N20TF , FDD6N50TF , FDD6N50TM , FDD7030BL , FDD7N25LZTM , IRFP260 , FDD8580 , FDD8586 , FDD86367F085 , FDD86369F085 , FDD8750 , FDD9411F085 , FDFC2P100 , FDFC3N108 .

History: AM8N25-550D | AM2373P | VS3625GPMC | MDV1595SURH | VBA3695

 

 
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