All MOSFET. FDD7N60NZTM Datasheet

 

FDD7N60NZTM MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD7N60NZTM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm

Package: D-PAK

FDD7N60NZTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD7N60NZTM Datasheet (PDF)

0.1. fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf Size:663K _fairchild_semi

FDD7N60NZTM
FDD7N60NZTM

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- • Low Crs

9.1. fdd7n20 fdu7n20.pdf Size:346K _fairchild_semi

FDD7N60NZTM
FDD7N60NZTM

April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69Ω Features Description • RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge( Typ. 5nC ) stripe, DMOS technology. • Low Crss ( Typ. 5pF ) This advanced technology has bee

9.2. fdd7n20tm.pdf Size:607K _fairchild_semi

FDD7N60NZTM
FDD7N60NZTM

November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo

 9.3. fdd7n25lztm.pdf Size:285K _fairchild_semi

FDD7N60NZTM
FDD7N60NZTM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS(on) = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ.12nC) DMOS technology. • Low Crss ( Typ. 8pF) This advance technology has been especial

9.4. fdd7n25lz.pdf Size:291K _fairchild_semi

FDD7N60NZTM
FDD7N60NZTM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS(on) = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ.12nC) DMOS technology. • Low Crss ( Typ. 8pF) This advance technology has been especial

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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