FDFMA2N028Z Todos los transistores

 

FDFMA2N028Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDFMA2N028Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: MICROFET2X2
 

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FDFMA2N028Z Datasheet (PDF)

 ..1. Size:615K  fairchild semi
 fdfma2n028z.pdf pdf_icon

FDFMA2N028Z

July 2014FDFMA2N028ZIntegrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68mFeatures General DescriptionMOSFET This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable Max rDS(on) = 68m at VGS = 4.5V, ID = 3.7Aapplications. It features a MOSFET with low on-state resistance, Max

 8.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2N028Z

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

 8.2. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2N028Z

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

 8.3. Size:379K  fairchild semi
 fdfma2p029z.pdf pdf_icon

FDFMA2N028Z

July 2014FDFMA2P029ZIntegrated P-Channel PowerTrench MOSFET and Schottky Diode20V, 3.1A, 95m Features General DescriptionMOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1Aportable applications. It features a MOSFET with very low on-

MOSTRAR MÁS

Otros transistores... FDD86367F085 , FDD86369F085 , FDD8750 , FDD9411F085 , FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , IRF9540N , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT .

History: VBE2658 | P0660ATF | ATM2302BNSA | IPD60R1K0PFD7S | 2SK1762 | IPAW60R600P7S | TK16J60W5

 

 
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