FDFMA2N028Z Specs and Replacement

Type Designator: FDFMA2N028Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: MICROFET2X2

FDFMA2N028Z substitution

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FDFMA2N028Z datasheet

 ..1. Size:615K  fairchild semi
 fdfma2n028z.pdf pdf_icon

FDFMA2N028Z

July 2014 FDFMA2N028Z Integrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68m Features General Description MOSFET This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable Max rDS(on) = 68m at VGS = 4.5V, ID = 3.7A applications. It features a MOSFET with low on-state resistance, Max ... See More ⇒

 8.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2N028Z

July 2014 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0A portable applications. It features a MOSFET with low on-s... See More ⇒

 8.2. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2N028Z

December 2008 FDFMA2P853T tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOS... See More ⇒

 8.3. Size:379K  fairchild semi
 fdfma2p029z.pdf pdf_icon

FDFMA2N028Z

July 2014 FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.1A, 95m Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1A portable applications. It features a MOSFET with very low on- ... See More ⇒

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Detailed specifications: FDD86367F085, FDD86369F085, FDD8750, FDD9411F085, FDFC2P100, FDFC3N108, FDFM2N111, FDFM2P110, SKD502T, FDFMA2P029Z, FDFMA2P853, FDFMA2P853T, FDFMA2P857, FDFMA2P859T, FDFMA3N109, FDFME2P823ZT, FDFME3N311ZT

Keywords - FDFMA2N028Z MOSFET specs

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