Справочник MOSFET. FDFMA2N028Z

 

FDFMA2N028Z Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDFMA2N028Z
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.068 Ohm
   Тип корпуса: MICROFET2X2
 

 Аналог (замена) для FDFMA2N028Z

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDFMA2N028Z Datasheet (PDF)

 ..1. Size:615K  fairchild semi
 fdfma2n028z.pdf pdf_icon

FDFMA2N028Z

July 2014FDFMA2N028ZIntegrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68mFeatures General DescriptionMOSFET This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable Max rDS(on) = 68m at VGS = 4.5V, ID = 3.7Aapplications. It features a MOSFET with low on-state resistance, Max

 8.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2N028Z

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

 8.2. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2N028Z

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

 8.3. Size:379K  fairchild semi
 fdfma2p029z.pdf pdf_icon

FDFMA2N028Z

July 2014FDFMA2P029ZIntegrated P-Channel PowerTrench MOSFET and Schottky Diode20V, 3.1A, 95m Features General DescriptionMOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1Aportable applications. It features a MOSFET with very low on-

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Другие MOSFET... FDD86367F085 , FDD86369F085 , FDD8750 , FDD9411F085 , FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , IRF9540N , FDFMA2P029Z , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT .

History: 50N06F | IRFI840GLCPBF | OSG60R022HT3ZF | CJAC10TH10 | 2SK2793 | TPM8205ATS6 | BF1208D

 

 
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